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IRF6716MPbF IRF6716MTRPbF
l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested
PD - 97274C
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on)
1.2m@10V
VDSS Qg
tot
VGS Qgd
12nC
RDS(on)
2.0m@ 4.5V
25V max 20V max 39nC
Qgs2
5.3nC
Qrr
28nC
Qoss
27nC
Vgs(th)
1.9V
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6716MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
6
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
25 20 39 31 180 320 330 32
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 10 20 30 40 50 ID= 32A V = 20V DS VDS= 13V
A
mJ A
5 4 3 2 1 0 2 3 4 5 6 7 8 T J = 25C T J = 125C
ID = 40A
9
10
60
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance vs. Gate Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.65mH, RG = 25, IAS = 32A.
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04/30/09
IRF6716MPbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 --- --- --- 1.4 --- --- --- --- --- 220 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 17 1.2 2.0 1.9 -6.1 --- --- --- --- --- 39 10 5.3 12 11.7 17.3 27 1.0 26 105 25 41 5150 1340 610 --- --- 1.6 2.6 2.4 --- 1.0 150 100 -100 --- 59 --- --- --- --- --- --- 1.6 --- --- --- --- --- --- --- pF nC
Conditions
VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 40A VGS = 4.5V, ID = 32A V V VDS = VGS, ID = 100A

mV/C A VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TJ = 125C nA S VGS = 20V VGS = -20V VDS = 15V, ID = 32A VDS = 13V VGS = 4.5V ID = 32A See Fig. 2 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5VA ns ID = 32A RG = 1.8 See Fig. 17 VGS = 0V VDS = 13V = 1.0MHz
nC
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 28 28 4.5 A 320 1.0 42 42 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 32A, VGS = 0V TJ = 25C, IF = 32A di/dt = 200A/s
d
Notes:
Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature.
2
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IRF6716MPbF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
f
Parameter
Max.
3.6 2.3 78 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
100 D = 0.50 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 A 1 2 3 3 A
g dg eg fg
Parameter
Typ.
--- 12.5 20 --- 1.0 0.031
Max.
35 --- --- 1.6 ---
Units
C/W
A
W/C
Thermal Response ( Z thJA )
10
1
0.1
Ri (C/W) i (sec) 2.003 0.000686 17.536 0.78614 15.465 28
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100 1000
0.001 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6716MPbF
1000 60s PULSE WIDTH Tj = 25C 1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
60s PULSE WIDTH
Tj = 150C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
BOTTOM
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
100
10
2.5V 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 10 0.1 1
2.5V 10 100
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C T J = 25C T J = -40C
Fig 5. Typical Output Characteristics
2.0 ID = 40A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
1.5
V GS = 10V V GS = 4.5V
10
1.0
1
0.1 1 2 3 4
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
6 T J = 25C 5 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
10000 Ciss Coss 1000 Crss
4 3 2 1
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 0 50 100 150 200
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6716MPbF
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec
100
T J = 150C T J = 25C T J = -40C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
10msec DC
1msec
1 VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V)
1
T A = 25C T J = 150C
Single Pulse 0.1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200 175 150
ID, Drain Current (A)
3.0
Fig 11. Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
2.5
125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (C)
2.0 ID = 100A 1.5 ID = 1.0mA ID = 1.0A 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
ID = 250A
Fig 12. Maximum Drain Current vs. Case Temperature
1400
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 16A 19A BOTTOM 32A TOP
1200 1000 800 600 400 200 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6716MPbF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
VDS 90%
+
D.U.T.
- VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6716MPbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D S G S D
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
IRF6716MPbF
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE MIN MAX A 6.25 6.35 5.05 B 4.80 3.85 3.95 C D 0.35 0.45 0.72 E 0.68 F 0.68 0.72 G 1.38 1.42 0.84 H 0.80 J 0.38 0.42 K 0.88 1.01 2.41 L 2.28 M 0.616 0.676 R 0.020 0.080 P 0.17 0.08 IMPERIAL MIN MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.054 0.056 0.032 0.033 0.015 0.017 0.035 0.039 0.090 0.095 0.0235 0.0274 0.0008 0.0031 0.003 0.007
DirectFET Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF6716MPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6716). For 1000 parts on 7" reel, order IRF6716TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) METRIC IMPERIAL METRIC IMPERIAL MIN MIN MAX MAX CODE MIN MAX MAX MIN 12.992 6.9 A N.C N.C 177.77 N.C N.C 330.0 0.795 0.75 B N.C N.C 19.06 N.C N.C 20.2 0.504 0.53 C 0.50 0.520 13.5 12.8 13.2 12.8 0.059 0.059 D N.C N.C 1.5 1.5 N.C N.C 3.937 2.31 E N.C N.C 58.72 100.0 N.C N.C F N.C N.C 0.53 0.724 N.C N.C 13.50 18.4 G 0.488 0.47 0.567 11.9 12.4 N.C 12.01 14.4 H 0.469 0.47 0.606 11.9 11.9 N.C 12.01 15.4
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 7.90 8.10 0.319 0.154 3.90 4.10 0.161 0.469 11.90 12.30 0.484 0.215 5.45 5.55 0.219 0.201 5.10 5.30 0.209 0.256 6.50 6.70 0.264 0.059 1.50 N.C N.C 0.059 1.50 1.60 0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2009
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